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  ne677m04 nec's medium power npn silicon high frequency transistor r54 2.050.1 1.250.1 3 1.30 1 4 2 0.65 0.65 1.25 2.00.1 +0.30 +0.01 -0.05 0.65 0.65 +0.40 +0.30 -0.05 (leads 1, 3 and ,4) 0.590.05 +0.11 +0.1 -0.05 pin connections 1. emitter 2. collector 3. emitter 4. base notes: 1. pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. collector to base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected t o the guard pin of capacitance meter. 3. electronic industrail association of japan 4. description nec's ne677m04 is fabricated using nec's hft3 wafer process. with a transition frequency of 15 ghz, the ne677m04 is usable in applications from 100 mhz to 3 ghz. the ne677m04 provides p1db of 15 dbm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. nec's ne677m04 is housed in nec's new low profile/flat lead style "m04" package ? high gain bandwidth: f t = 15 ghz ? high output power: p -1db = 15 dbm at 1.8 ghz ? high linear gain: g l = 15.5 db at 1.8 ghz ? new low profile m04 package: sot-343 footprint, with a height of only 0.59 mm flat lead style for better rf performance features part number ne677m04 package outline m04 eiaj 3 registration number 2sc5751 symbols parameters and conditions units min typ max i cbo collector cutoff current at v cb = 5v, i e = 0 na 100 i ebo emitter cutoff current at v eb = 1 v, i c = 0 na 100 h fe dc current 1 gain at v ce = 3 v, i c = 20 ma 75 120 150 p 1db output power at 1 db compression point at v ce = 2.8 v, i cq = 8 ma, dbm 15.0 f = 1.8 ghz, p in = 1 dbm g l linear gain at v ce = 2.8 v, i cq = 8 ma, f = 1.8 ghz, p in = -10 dbm db 15.5 mag maximum available gain 4 at v ce = 3 v, i c = 20 ma, f = 2 ghz dbm 16.0 |s 21e | 2 insertion power gain at v ce = 3 v, i c = 20 ma, f = 2 ghz db 10.0 13.5 c collector efficiency at v ce = 2.8 v, i cq = 8 ma, f = 1.8 ghz, % 50 p in = 1 dbm nf noise figure at v ce = 3 v, i c = 5 ma, f = 2 ghz, zs =z opt db 1.7 2.5 f t gain bandwidth at v ce = 3 v, i c = 20 ma, f = 2 ghz ghz 15 cre reverse transfer capacitance 2 at v cb = 3 v, i c = 0, f = 1 mhz pf 0.22 0.50 electrical characteristics (t a = 25 c) dc rf california eastern laboratories mag = |s 21 | |s 12 | k - 1 ). 2 ( k
note: 1. operation in excess of any one of these parameters may result in permanent damage. 2. mounted on a 1.08cm 2 x 1.0 mm thick glass epoxy pcb. symbols parameters units ratings v cbo collector to base voltage v 9.0 v ceo collector to emitter voltage v 6.0 v ebo emitter to base voltage v 2.0 i c collector current ma 50 p t total power dissipation 2 mw 205 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25 c) part number quantity NE677M04-T2-A 3k pcs./reel ordering information ne677m04 symbols parameters units ratings r th j-a thermal resistance from c/w 600 junction to ambient thermal resistance note: 1. mounted on a 1.08cm 2 x 1.0 mm thick glass epoxy pcb. total power dissipation vs. ambient temperature collector current vs. collector to emitter voltage dc current gain vs. collector current reverse transfer capacitance vs. collector to base voltage typical performance curves (t a = 25 c) total power dissipation p out (mw) ambient temperature t a (oc) reverse transfer capacitance c re (pf) collector to base voltage v cb (v) collector current i c (ma) collector to emitter voltage v ce (v) dc current gain (h fe ) collector current i c (ma) 300 250 200 150 100 50 0255075100125150 mounted on glass epoxy pcb (1.08 cm 2 x 1.0 mm (t) ) 0.5 f = 1mh z 0.4 0.3 0.2 0.1 0 123456 60 50 40 30 20 10 0 12345678 i b : 50 a step 500 a 400 a 300 a 200 a 100 a 500 a i b : 50 a 000 100 010 0.1 1 10 100 v ce = 3 v
gain bandwidth product vs. collector current insertion power gain, mag, msg vs. collector current insertion power gain, mag, msg vs. collector current insertion power gain, mag, msg vs. frequency typical performance curves (t a = 25 c) ne677m04 insertion power gain, mag vs. collector current noise figure, associated gain vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) insertion power gain |s 21e | 2 , (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ma) insertion power gain |s 21e | 2 , (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain |s 21e | 2 , (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain |s 21e | 2 , (db) maximum available power gain mag (db) collector current i c (ma) noise figure nf (db) collector current i c (ma) 15 10 5 0 1 10 100 v ce = 3 v f = 2 ghz 0 0.1 1 10 5 10 15 20 25 35 v ce = 3 v i c = 20 ma mag msg |s 21e | 2 v ce = 3 v f = 2 ghz |s 21e | 2 25 20 10 5 0 15 1 10 100 mag msg v ce = 3 v f = 2.5 ghz |s 21e | 2 25 20 10 5 0 15 1 10 100 mag v ce = 3 v f = 2 ghz 8 8 12 16 6 4 4 2 0 0 110100 g a nf v ce = 3 v f = 1 ghz mag msg |s 21e | 2 1 10 100 25 20 10 5 0 15 associated gain g a (db)
output power, power gain, collector current, collector efficiency vs. input power typical performance curves (t a = 25 c) output power p out (dbm) power gain g p (db) input power p in (dbm) ne677m04 g p v ce = 3.2 v f = 0.9 ghz i cq = 8 ma (rf off) p out c i c 25 20 15 10 5 0 -20 -15 -10 -5 0 5 0 50 100 150 200 250 collector current i c (ma), collector efficiency c (%) output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm) power gain g p (db) input power p in (dbm) g p v ce = 2.8 v f = 1.8 ghz i cq = 8 ma (rf off) c i c 25 20 15 10 5 0 10 -15 -10 -5 0 5 0 50 100 150 200 250 p out collector current i c (ma), collector efficiency c (%) output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm) power gain g p (db) input power p in (dbm) g p v ce = 3.2 v f = 1.8 ghz i cq = 8 ma (rf off) c i c 25 20 15 10 5 0 10 -15 -10 -5 0 5 0 50 100 150 200 250 p out collector current i c (ma), collector efficiency c (%) output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm) power gain g p (db) input power p in (dbm) v ce = 3.2 v f = 2.4 ghz i cq = 8 ma (rf off) c i c 25 20 15 10 5 0 10 -15 -10 -5 0 5 0 50 100 150 200 250 p out g p collector current i c (ma), collector efficiency c (%)
ne677m04 frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne677m04 v c = 2 v, i c = 10 ma typical scattering parameters (t a = 25 c) note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain j50 j100 j25 j10 0 -j10 -j25 -j50 -j100 10 50 100 25 s22 s11 +90 o +45 o +0o +0 o 5 10 15 20 -45 o -90 o -135 o +180 o +135 o 0.100 0.72 -28.02 23.85 159.39 0.01 76.80 0.94 -17.17 0.11 32.34 0.200 0.67 -53.32 21.19 142.90 0.02 61.76 0.85 -30.90 0.22 29.46 0.300 0.62 -74.47 18.36 129.52 0.03 53.97 0.75 -41.48 0.30 27.71 0.400 0.57 -91.69 15.78 119.03 0.04 47.84 0.66 -49.21 0.38 26.40 0.500 0.54 -105.42 13.68 110.66 0.04 44.49 0.60 -55.01 0.46 25.44 0.600 0.50 -119.13 11.77 103.58 0.04 41.61 0.51 -57.12 0.62 24.54 0.700 0.48 -128.64 10.42 97.78 0.04 40.18 0.48 -61.53 0.69 23.81 0.800 0.47 -136.17 9.33 92.96 0.05 39.74 0.45 -63.91 0.75 23.13 0.900 0.46 -143.27 8.43 88.43 0.05 39.29 0.43 -66.99 0.82 22.51 1.000 0.46 -148.66 7.70 84.44 0.05 39.40 0.42 -69.40 0.87 21.95 1.500 0.44 -170.56 5.30 67.31 0.06 40.48 0.39 -82.07 1.10 17.66 1.800 0.43 179.75 4.47 58.55 0.06 41.76 0.39 -89.26 1.19 15.82 1.900 0.43 176.51 4.24 55.72 0.07 41.66 0.39 -91.76 1.20 15.33 2.000 0.43 173.63 4.04 52.97 0.07 42.00 0.40 -94.18 1.22 14.87 2.500 0.42 159.00 3.26 39.73 0.08 42.28 0.42 -105.45 1.26 13.00 3.000 0.42 144.48 2.73 27.19 0.10 40.73 0.46 -115.95 1.24 11.64 3.500 0.43 129.44 2.34 15.06 0.11 38.24 0.49 -125.23 1.18 10.67 4.000 0.45 115.14 2.04 3.42 0.13 34.92 0.53 -134.51 1.11 9.99 4.500 0.48 102.37 1.79 -7.89 0.14 30.39 0.56 -144.23 1.04 9.71 5.000 0.50 91.32 1.59 -18.83 0.16 25.33 0.59 -154.88 0.97 9.94 5.500 0.53 81.53 1.42 -29.44 0.18 19.49 0.62 -165.89 0.90 9.00 6.000 0.55 72.28 1.27 -39.61 0.20 13.49 0.66 -176.84 0.85 8.11
ne677m04 frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne677m04 v c = 3 v, i c = 20 ma typical scattering parameters (t a = 25 c) note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain j50 j100 j25 j10 0 -j10 -j25 -j50 -j100 10 50 100 25 s22 s11 +90 o +45 o +0o +0 o 10 30 20 -45 o -90 o -135 o +180 o +135 o 0.100 0.58 -36.91 34.82 154.30 0.01 65.53 0.91 -19.74 0.28 35.64 0.200 0.53 -67.97 29.03 135.74 0.02 59.98 0.78 -33.77 0.34 32.23 0.300 0.49 -91.49 23.80 122.19 0.02 55.05 0.67 -43.13 0.45 30.35 0.400 0.46 -108.88 19.70 112.29 0.03 51.06 0.58 -49.18 0.56 28.90 0.500 0.44 -121.87 16.66 104.71 0.03 49.50 0.52 -53.43 0.65 27.72 0.600 0.42 -135.00 14.16 98.54 0.03 48.74 0.45 -53.84 0.81 26.72 0.700 0.42 -143.29 12.41 93.35 0.03 49.30 0.42 -57.21 0.89 25.86 0.800 0.41 -149.68 11.03 89.03 0.03 50.12 0.40 -58.72 0.95 25.08 0.900 0.41 -155.84 9.91 84.93 0.04 50.69 0.39 -61.16 0.99 24.32 1.000 0.41 -160.23 9.01 81.35 0.04 51.41 0.38 -63.04 1.04 22.48 1.500 0.40 -178.96 6.14 65.55 0.05 53.28 0.37 -74.89 1.17 18.28 1.800 0.39 172.52 5.16 57.30 0.06 53.31 0.38 -82.12 1.20 16.70 1.900 0.39 169.64 4.90 54.62 0.06 53.31 0.38 -84.61 1.20 16.25 2.000 0.39 167.05 4.66 52.02 0.06 53.16 0.38 -87.15 1.21 15.82 2.500 0.39 153.59 3.75 39.33 0.08 51.37 0.42 -98.84 1.19 14.09 3.000 0.39 139.95 3.14 27.21 0.10 48.43 0.45 -109.77 1.15 12.83 3.500 0.41 125.64 2.68 15.39 0.11 44.68 0.49 -119.46 1.09 12.00 4.000 0.43 111.98 2.34 3.97 0.13 40.02 0.53 -129.07 1.02 11.72 4.500 0.45 99.88 2.06 -7.19 0.15 34.90 0.56 -139.11 0.95 11.48 5.000 0.48 89.38 1.83 -18.07 0.16 29.26 0.60 -150.00 0.88 10.49 5.500 0.51 80.01 1.64 -28.76 0.18 22.90 0.63 -161.27 0.82 9.55 6.000 0.53 71.10 1.47 -39.12 0.20 16.56 0.66 -172.54 0.77 8.69
exclusive north american agent for nec rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 internet: http://www.cel.com 11/22/2002 data subject to change without notice ne677m04 frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne677m04 v c = 5 v, i c = 30 ma typical scattering parameters (t a = 25 c) note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. j50 j100 j25 j10 0 -j10 10 50 100 25 s22 s11 +90 o +45 o +0o +0 o 20 30 40 -45 o -90 o -135 o +180 o +135 o 10 0.100 0.53 -41.03 40.66 151.83 0.01 79.56 0.89 -20.30 0.21 36.62 0.200 0.48 -73.66 32.81 132.70 0.02 64.08 0.75 -33.75 0.39 33.32 0.300 0.44 -97.50 26.31 119.35 0.02 56.29 0.63 -42.07 0.53 31.43 0.400 0.42 -114.52 21.49 109.81 0.02 53.44 0.56 -47.07 0.66 30.03 0.500 0.41 -127.00 18.03 102.57 0.02 53.31 0.50 -50.52 0.75 28.75 0.600 0.39 -139.82 15.28 96.73 0.03 53.08 0.43 -50.09 0.90 27.65 0.700 0.39 -147.57 13.34 91.78 0.03 54.05 0.41 -52.99 0.98 26.75 0.800 0.38 -153.47 11.83 87.64 0.03 55.02 0.40 -54.21 1.02 24.98 0.900 0.38 -159.31 10.62 83.69 0.03 55.65 0.39 -56.48 1.06 23.55 1.000 0.38 -163.26 9.64 80.25 0.04 56.16 0.38 -58.27 1.09 22.49 1.500 0.37 179.14 6.55 64.91 0.05 58.22 0.37 -70.16 1.18 18.69 1.800 0.37 171.01 5.50 56.83 0.06 57.93 0.38 -77.47 1.19 17.16 1.900 0.37 168.30 5.22 54.20 0.06 57.51 0.39 -80.11 1.20 16.71 2.000 0.37 165.83 4.96 51.65 0.06 57.41 0.39 -82.71 1.20 16.30 2.500 0.37 152.63 3.99 39.13 0.08 54.90 0.43 -94.79 1.17 14.62 3.000 0.37 139.29 3.33 27.15 0.09 51.63 0.46 -106.02 1.12 13.43 3.500 0.38 125.14 2.85 15.43 0.11 47.27 0.50 -116.01 1.05 12.75 4.000 0.40 111.70 2.49 4.05 0.13 42.60 0.54 -125.90 0.99 12.91 4.500 0.43 99.67 2.19 -7.08 0.15 37.08 0.58 -136.09 0.91 11.79 5.000 0.46 89.42 1.95 -17.99 0.16 31.31 0.61 -147.22 0.84 10.78 5.500 0.49 80.22 1.74 -28.73 0.18 25.13 0.65 -158.70 0.78 9.86 6.000 0.51 71.38 1.56 -39.19 0.20 18.62 0.68 -170.08 0.73 8.98
4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408) 919-2500 facsimile: ( 408 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substances in electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix ? indicates that the device is pb-free. the ?z suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cel? understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information. restricted substance per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -az lead (pb) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmium < 100 ppm not detected hexavalent chromium < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: information provided by cel on its website or in other communications concerting the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. efforts are underway t o better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. cel and ce l suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall cel? liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of warranties and liability.


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